savantic semiconductor product specification silicon pnp power transistors 2SB1286 d escription with to-220c package complement to type 2sd1646 darlington high dc current gain applications for low frequency power amplifier and power driver applications pinning pin description 1 base 2 collector; connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -7 v i c collector current -2 a p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1286 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma,i b =0 -100 v v (br)cbo collector-base breakdown voltage i c =-1ma,i e =0 -100 v v (br)ebo emitter-base breakdown voltage i e =-5ma, i c =0 -7 v v cesat collector-emitter saturation voltage i c =-1a ,i b =-1ma -1.5 v v besat base-emitter saturation voltage i c =-1a ,i b =-1ma -2.0 v i cbo collector cut-off current v cb =-100v, i e =0 -10 a i ceo collector cut-off current v ce =-100v, i b =0 -100 a i ebo emitter cut-off current v eb =-7v, i c =0 -5 ma h fe dc current gain i c =-1a ; v ce =-2v 1000 10000
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1286 package outline fig.2 outline dimensions
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